Characterization of Eu doped ZnO micropods prepared by chemical bath deposition on p-Si substrate

The chemical bath deposition method was used to synthesize Eu-doped ZnO on p-type (100) silicon. SEM image shows the formation of micropod-like ZnO. EDX and XPS measurements showed an increase in Eu concentration up 2.54% simultaneous presence Eu3+ Eu2+. XRD analysis confirmed that interstitial ions distorted four tetrahedral bonds, substitution Eu2+ increased c lattice parameter. Only 5D0?7F2 transition-related emission observed, so a weak transfer energy from matrix ion occurred. However, competition between deep-level defects host deforms visible towards red color. I–V Eu-ZnO/p-Si heterojunctions diode-like behavior with low rectification ratio barrier height around 0.84 eV not affected by concentration.